| abstract |
The present invention provides a self-powered photodetector capable of distinguishing ultraviolet wavelength bands, comprising an α-Ga 2 O 3 /Cu 2 O pn junction photoanode grown on a conductive substrate, and the α-Ga 2 O 3 is a transparent conductive substrate. Nanopillar arrays grown on the bottom, Cu 2 O is the nanospheres grown on the nanopillar arrays. The invention also proposes a preparation method of an α-Ga 2 O 3 /Cu 2 O pn junction photoanode, and an application of the self-powered photodetector. In the self-powered photodetector proposed by the present invention, the α-Ga 2 O 3 nano-column array grows vertically along the transparent conductive electrode substrate, and the array surface is flat and uniform in size. The Cu 2 O nanospheres are dispersed on the surface of the nanopillar array, and the two are in good contact. The one-dimensional α-Ga 2 O 3 nanopillars have a large specific surface area and form a pn junction with the nanospheres, which can distinguish between different wavelengths of light, accelerate the separation and transmission of photogenerated carriers, and improve the photoresponse performance. . |