http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109467159-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C02F2305-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C02F2201-002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C02F1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C02F1-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C02F1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C02F1-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-00 |
| filingDate | 2018-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109467159-B |
| titleOfInvention | Self-powered semiconductor photoelectric catalytic device with WSA (Wireless sensor array) position sensitive structure |
| abstract | A self-powered semiconductor photoelectric catalytic device with a WSA position sensitive structure belongs to the technical field of photoelectric catalysis. The existing semiconductor photoelectric catalytic device can not keep the catalytic purification effect in the optimum state all the time in the process of sunshine duration. The invention is characterized in that in P ‑ N + N of silicon wafer + A group of wedge-shaped anodes W and a group of strip-shaped anodes S are distributed on the surface of the region in a crossed manner, a third anode A is arranged between the wedge-shaped anodes W and the strip-shaped anodes S, and the wedge-shaped anodes W, the strip-shaped anodes S and the third anode A are separated by wedge-shaped anode channels and strip-shaped anode channels; the channel width a of the wedge-shaped anode channel and the strip-shaped anode channel is 100-120 mu m, and the bottom of the channel is positioned at P ‑ Region, channel is located at P ‑ The depth b of the area part is 50-120 mu m, a semiconductor nanowire photoelectric catalytic layer is distributed at the bottom of the channel, and the thickness of the semiconductor nanowire photoelectric catalytic layer is 1-2 mu m; p ‑ Region to N + The doping concentration of the region is changed from thin to thick. The invention can utilize the WSA position sensitive structure to make the semiconductor photoelectric catalytic device track sunlight and ensure the light energy receiving quantity. |
| priorityDate | 2018-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.