http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109449316-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2102-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-17 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-155 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-80 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-54 |
| filingDate | 2016-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109449316-B |
| titleOfInvention | A kind of preparation method of In-doped MoO3 thin film |
| abstract | The invention provides a preparation method of In-doped MoO 3 thin film. The preparation method of the In-doped MoO 3 film includes the following steps: providing indium salt and MoO 3 , dissolving the indium salt and MoO 3 in an organic solvent to form a mixed solution, and adding an inorganic acid to the mixed solution. Perform heat treatment to obtain a precursor solution, wherein the temperature of the heat treatment is 50-80 ° C; provide a substrate, deposit the precursor solution on the substrate by a solution processing method, and then perform an annealing treatment to obtain In Doped MoO 3 thin film, wherein the annealing temperature is 150-350°C. |
| priorityDate | 2016-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.