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publicationDate 2019-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-109437087-A
titleOfInvention Spin Hall nano-oscillator based on out-of-plane magnetic anisotropy layer and preparation method
abstract A spin Hall nano-oscillator based on an out-of-plane magnetic anisotropy layer belongs to the technical field of microwave electronic equipment. The nano-oscillator includes a substrate, and an out-of-plane magnetic anisotropic magnetic thin film layer and a non-magnetic heavy metal thin film layer are sequentially formed on the substrate. In the spin Hall nano-oscillator based on the out-of-plane magnetic anisotropy layer provided by the present invention, the magnetic thin film layer has out-of-plane magnetic anisotropy, compared with the traditional magnetic material based on in-plane magnetic anisotropy , under the same driving current density, the out-of-plane magnetic anisotropic magnetic material can obtain a larger magnetic moment precession angle and microwave output power; at the same time, by adjusting the current intensity, high-frequency microwave output of different powers can be achieved, and the output microwave The signal performance is good, the structure is simple, the power consumption is low, it is compatible with the CMOS process, and is easy to integrate.
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