| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-80 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-882
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
2018-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6629768334f7a369e22857560f1b1a94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b730695d7f8e428f9554c74f1d0a69a |
| publicationDate |
2019-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-109427972-A |
| titleOfInvention |
Semiconductor device comprising memory material substantially encapsulated with dielectric material, and related systems and methods |
| abstract |
The present application relates to semiconductor structures comprising memory materials substantially encapsulated with dielectric materials, and related systems and methods. A semiconductor structure includes a stacked structure. Each of the stacked structures includes: a first conductive material; a chalcogenide material over the first conductive material; a second conductive material over the chalcogenide material; and a first interposer An electrical material between the chalcogenide material and the first conductive material and between the chalcogenide material and the second conductive material. The semiconductor structure further includes a second dielectric material on at least sidewalls of the chalcogenide material. The chalcogenide material may be substantially encapsulated by one or more dielectric materials. The present invention discloses related semiconductor structures and related methods. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023129619-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11424118-B2 |
| priorityDate |
2017-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |