| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2018-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2020-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-109427659-B |
| titleOfInvention |
Semiconductor device and method of manufacture |
| abstract |
An opening is formed in a dielectric material overlying a semiconductor substrate. The opening may include a via portion and a trench portion. During the manufacturing process, a treatment chemistry may be placed in contact with the exposed surface to release charge accumulated on the surface. By releasing the charge, the surface variation potential difference is reduced, helping to prevent galvanic corrosion during further manufacturing. Embodiments of the invention also relate to semiconductor devices and methods of manufacture. |
| priorityDate |
2017-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |