http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109425637-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be2c55a9de09e08e3404c0a5a1ae4dc7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y15-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y15-00 |
| filingDate | 2017-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61b39d1fc56f8b8bc591fc3fca2dfca6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47d27b44080ad638d16c9ff3b8a1430e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4217f392c320e32026194b8f27b9216f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_535603643d4de6effd8d4dc26f73348f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fab89496749967eab583f63984fb1d2e |
| publicationDate | 2019-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109425637-A |
| titleOfInvention | Modification method for improving the gas-sensing properties of silicon nanowires and its gas-sensing sensor |
| abstract | The invention discloses a modification method for improving the gas-sensing properties of silicon nanowires and a gas-sensitive sensor thereof. First, a hydrofluoric acid aqueous solution is used to modify the surface of a silicon wafer, then metal-assisted chemical etching of the silicon nanowire is performed, and finally a double-apex electrode is formed to form a Gas sensor. In the invention, the porous silicon nanowire gas sensing sensor with the top polymerized structure is formed by the treatment of the hydrofluoric acid aqueous solution, and more conductive paths are formed between the double vertex electrodes, so that more porous silicon nanowires participate in the gas sensing reaction. Furthermore, the detection of ultra-low concentration nitrogen oxide gas at room temperature has the advantages of high sensitivity and good selectivity. The method has the advantages of simple equipment, convenient operation, good repeatability, low cost and the like, and can better realize industrial production. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112782241-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110282594-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110028038-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112028077-A |
| priorityDate | 2017-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 60.