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filingDate 2018-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-109402656-B
titleOfInvention Preparation method of cobalt phosphide modified molybdenum-doped bismuth vanadate photoelectrode
abstract The invention discloses a preparation method of a cobalt phosphide modified molybdenum-doped bismuth vanadate photoelectrode, which comprises the steps of firstly preparing a bismuth oxyiodide photoelectrode on the surface of conductive glass by adopting a deposition method, dropwise adding a vanadium source and a molybdenum source solution on the bismuth oxyiodide photoelectrode, annealing and cleaning to obtain a molybdenum-doped bismuth vanadate photoelectrode, and then carrying out photo-assisted electrodeposition of cobalt phosphide on the surface of the molybdenum-doped bismuth vanadate photoelectrode in a three-electrode system to obtain the prepared novel bismuth vanadate photoelectrode. The photoelectrode prepared by the invention is used for preparing hydrogen by decomposing water through photoelectrocatalysis, the molybdenum doping can effectively increase the concentration of current carriers and increase the photocurrent, and the electrodeposition of cobalt and phosphorus can effectively delay the recombination loss in the photoelectrode, prolong the service life of the photon-generated current carriers and promote the oxygen precipitation reaction on the surface of the photoelectrode, thereby improving the solar energy hydrogen conversion efficiency of the semiconductor photoelectrode.
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type http://data.epo.org/linked-data/def/patent/Publication

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