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filingDate 2018-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67dbad213dc05c88f464045b01aa3b85
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publicationDate 2019-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-109378407-A
titleOfInvention A kind of preparation method and application of perovskite planar heterojunction
abstract The invention discloses a preparation method and application of a perovskite plane heterojunction, that is, first two perovskite target solutions with different halogen positions; then cover the upper surface of half of the cleaned substrate with a high-temperature tape, drop a A perovskite target solution, spin-coated and dried; then remove the high-temperature tape, suspend-coat the PMMA solution, dry, cover the part of the first layer of perovskite material coating with a new high-temperature tape, and then drip into the Another perovskite target solution was dropped on the upper surface of the substrate not covered with the high-temperature tape, and dried after spin coating; then the high-temperature tape was torn off and placed in a chlorobenzene solution to obtain the perovskite planar heterojunction . The material can be used to prepare photoluminescent devices with tunable emission wavelengths. The device utilizes voltage to regulate the migration of halogens in the perovskite heterojunction to change the band gap of the material at the heterojunction, thereby adjusting the wavelength and color of emission.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112210816-A
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