http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109355638-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-032 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30 |
| filingDate | 2018-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109355638-B |
| titleOfInvention | Preparation method of phase-change controllable all-inorganic perovskite film and device application |
| abstract | The invention belongs to the technical field of photoelectric functional materials, and particularly relates to a preparation method of a phase-change controllable all-inorganic perovskite thin film and application of a device. The method comprises the following steps: (1) respectively placing precursor lead bromide and cesium bromide in a vapor deposition device, placing a substrate in a deposition area, and vacuumizing the whole device; (2) introducing inert gas into the vapor deposition device; (3) setting deposition temperature and deposition time, wherein the deposition temperature is selected from 500-800 ℃, and the perovskite thin film has different components and crystal forms at different deposition temperatures. The invention adopts the chemical vapor deposition method, has simple process conditions, easy and accurate control, is suitable for industrialized production, has good film uniformity, good adhesiveness with the substrate material and good coverage, and the prepared photoelectric film has wide application prospect. The invention realizes that the perovskite phase is CsPb through changing the deposition temperature 2 Br 5 To CsPbBr 3 And (4) controllable growth. The photoelectric detector prepared on the basis of the perovskite thin film obtained by the invention has good photoelectric response and switching characteristics. |
| priorityDate | 2018-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.