| abstract |
A method of forming a via in a substrate having at least one damaged region extending from a first surface, etching the at least one damaged region of the substrate to form a via in the substrate, wherein the via extends through the substrate thickness T while the first surface of the substrate is masked. The mask is removed from the first surface of the substrate after etching, and upon removal of the mask, the first surface of the substrate has a surface roughness (Rq) of less than about 1.0 nm. |