http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109256668-A

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-16
filingDate 2018-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d157a0fec492877bf1109af2497bccb8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_564646e6cdd168734742f7aea64597d1
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publicationDate 2019-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-109256668-A
titleOfInvention Broadband saturable absorption mirror based on rutile wafer, preparation method and application in broadband Q-switched and mode-locked lasers
abstract The invention relates to a broadband saturable absorption mirror based on a rutile wafer, a preparation method and an application in a broadband Q-switched and mode-locked laser, which mainly include forming noble metal nanoparticles in a rutile crystal and realizing the generation of the Q-switched and mode-locked laser. The noble metal ions are implanted into the rutile crystal by ion implantation technology, the implantation energy is 50-300 keV, the dose is 1-10×10 16 ions/cm 2 , and noble metal nanoparticles are formed after annealing at 600°C for 1 h; The sample acts as a broadband saturable absorber mirror. The invention utilizes the rutile crystal implanted and annealed by precious metal ions as a broadband saturable absorption mirror, and is applied to a broadband Q-switched and mode-locked laser without adding or replacing other broadband saturable absorption mirrors.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111180302-A
priorityDate 2018-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 31.