http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109256471-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89f3efb8583f1229b9a555a3776c89ba |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42 |
| filingDate | 2018-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_029a46ccdd0f9695a773c0843aceab3f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c48b01e0b75a3b84566b4cf396e907c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6777efaee446220b571dcc39db2ec3ef http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_648dd1ee701d804fa1d8daff95dd7f20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c26440ab134b5b74d88bca7f2077c308 |
| publicationDate | 2019-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109256471-A |
| titleOfInvention | A lead-free all-inorganic perovskite cesium bismuth iodine thin film/n-type silicon heterojunction photodetector and preparation method thereof |
| abstract | The invention discloses a lead-free all-inorganic perovskite cesium bismuth iodine film/n-type silicon heterojunction photodetector and a preparation method thereof. The n-type silicon substrate is used as the base region of the photodetector, and the An n-type silicon substrate electrode is arranged on the lower surface of the n-type silicon substrate; an insulating layer is covered on the upper surface of the n-type silicon substrate, and a perovskite CsBi 3 I 10 film contact electrode is covered on the insulating layer, and the perovskite CsBi 3 A perovskite CsBi 3 I 10 film is laid on the contact electrode of the I 10 film, a part of the film forms an ohmic contact with the contact electrode of the perovskite CsBi 3 I 10 film, and the remaining part forms an ohmic contact with the part of the surface of the n-type silicon substrate that is not covered with an insulating layer Heterojunction. The photodetector of the invention has the advantages of simple process, low cost, stable properties, large current switching ratio and fast response speed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114597268-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113380911-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111063751-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111063751-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114597268-A |
| priorityDate | 2018-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.