| abstract |
The invention relates to a photovoltaic device that converts light into electrical energy, in particular to a perovskite solar cell of an inorganic semiconductor electron transport material. The method comprises: depositing an amorphous silicon thin film material on a transparent conductive glass, and then spin-coating a PCBM interface modification layer , then spin-coating perovskite light-absorbing material, spin-coating Spiro‑OMeTAD material as a hole transport layer, and finally vapor-depositing metal electrodes. The advantages of the present invention are: as the electron transport layer of the perovskite battery, the band gap of N-type amorphous silicon can be adjusted by the doping concentration, which can well achieve energy level matching with the perovskite material; low temperature preparation makes it more efficient It is suitable for flexible substrate perovskite solar cells; the uniformity and repeatability of the thin film prepared by the vacuum method are unmatched by the spin coating method. The PCBM interface modification layer can improve the energy level matching of the amorphous silicon film/perovskite interface, transport electrons and block holes, thereby reducing the recombination of photogenerated carriers at the interface between the electron transport layer and the absorption layer, and finally improving the solar cell. conversion efficiency. |