http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109192826-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate | 2018-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109192826-B |
| titleOfInvention | A kind of LED epitaxial slice and preparation method thereof |
| abstract | The invention discloses a kind of LED epitaxial slices and preparation method thereof, belong to technical field of semiconductors.The LED epitaxial slice includes substrate, buffer layer, n type semiconductor layer, stress release layer, active layer and p type semiconductor layer, and the buffer layer, the n type semiconductor layer, the stress release layer, the active layer and the p type semiconductor layer stack gradually over the substrate；The stress release layer includes multiple first sublayers and multiple second sublayers, the multiple first sublayer and the multiple alternately laminated setting of second sublayer；The material of first sublayer is the zinc oxide mixed with aluminium element, and the material of second sublayer is the gallium nitride mixed with phosphide element.The present invention can achieve good stress release effect, and lattice mismatch generates between sapphire and gallium nitride stress and defect is effectively avoided to extend to active layer, and the radiation recombination for being conducive to electrons and holes in active layer shines, and improve the luminous efficiency of light emitting diode. |
| priorityDate | 2018-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.