| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_705feb6820b1b0e74a11a547ddb08fe1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-332 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-841
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-586
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0641
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0036
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-5813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
2018-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04b0135d28a4e5ba8d4f056190f28b4f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5fe308087687fe3b8fce3232dcfaff0a |
| publicationDate |
2019-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-109155364-A |
| titleOfInvention |
Memristor electrode material preparation method, preparation device and memristor electrode material |
| abstract |
The embodiments of the present application provide a preparation method, a preparation device, and a memristor electrode material for a memristor electrode material. The preparation method includes: depositing a metal nitride on a substrate by a reactive sputtering process to obtain a metal nitride lining bottom; placing the metal nitride substrate in a nitrogen-containing atmosphere to perform laser annealing treatment to nitride the unreacted metal on the metal nitride substrate to obtain a memristor electrode material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109722631-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115110025-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-115110025-B |
| priorityDate |
2018-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |