| abstract |
The invention discloses a kind of heating laser peel-off devices, including laser lift-off apparatus body, the laser lift-off apparatus body includes the mobile platform for being set to lower end, the mobile platform is provided with heated base, sample stage is provided on the heated base, the heated base includes the electric heater unit being set to below the sample stage and for heating to the sample stage, the sample stage lower end is additionally provided with the temperature sensor for test sample platform temperature, insulation cover is covered with above the sample stage, the heat-insulation transparent window for facilitating laser to pass through is provided on position corresponding to the top of the insulation cover and the sample stage.Heating laser peel-off device of the invention provides suitable temperature environment for peeling GaN epitaxial wafer, solves the problems, such as the residual mechanical stress of the GaN epitaxy piece of Grown on Sapphire Substrates, generation the case where easy fragmentation when avoiding removing. |