| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02661
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02502 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate |
2013-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-109119518-B |
| titleOfInvention |
PVD buffer layer for LED fabrication |
| abstract |
Fabrication of gallium nitride-based light emitting devices using aluminum nitride buffer layers formed by Physical Vapor Deposition (PVD) is described. Process conditions for PVD AlN buffer layers are also described. Substrate pretreatment for PVD aluminum nitride buffer layers is also described. In one example, a method of fabricating a buffer layer on a substrate includes pretreating a surface of the substrate. The method also includes subsequently reactively sputtering an aluminum nitride (AlN) layer onto the substrate surface from an aluminum-containing target disposed within the Physical Vapor Deposition (PVD) chamber using a nitrogen-based gas or plasma. |
| priorityDate |
2012-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |