| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c19a91365ed494d9fe27d24190d4459f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-215
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2031-0344
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K39-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-151
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-113 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035218
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-107 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-42 |
| filingDate |
2018-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8059251b0d3f97a36d6770a4b2141a93 |
| publicationDate |
2019-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-109119509-A |
| titleOfInvention |
light detection element |
| abstract |
The present invention relates to light detection elements. A photodetection element according to an embodiment of the present application includes a photoelectric conversion structure including a first material having an absorption coefficient higher than that of single crystal silicon for light of a first wavelength included in a wavelength region in which single crystal silicon exhibits absorption, and generate positive and negative charges by absorbing photons; and an avalanche structure including a single unit that internally generates avalanche multiplication by injecting at least one selected from the group consisting of the above-mentioned positive and negative charges by the above-mentioned photoelectric conversion structure. crystalline silicon layer. The above-mentioned first material includes at least one selected from the group consisting of organic semiconductors, semiconductor-type carbon nanotubes, and semiconductor quantum dots. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11626502-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022173221-A1 |
| priorityDate |
2017-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |