http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109103263-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2018-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109103263-B |
| titleOfInvention | Thin film transistor, manufacturing method thereof and manufacturing method of display panel |
| abstract | The embodiment of the invention discloses a thin film transistor, a manufacturing method of the thin film transistor and a manufacturing method of a display panel. The thin film transistor includes: a substrate base plate; the substrate comprises a grid layer, a grid insulating layer, an active layer and a source drain layer, wherein the grid layer, the grid insulating layer, the active layer and the source drain layer are formed on the substrate body; the passivation layer is formed on one side, away from the substrate, of the active layer and is in direct contact with the first region of the active layer; wherein the active layer and the passivation layer are both doped with a rare earth element. The thin film transistor provided by the invention can improve the water and oxygen resistance of the thin film transistor. |
| priorityDate | 2018-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 58.