http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109088002-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_78160fe5924d399deb065f8cbc5ad347 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2102-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-471 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-474 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 |
| filingDate | 2018-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d52c0502da6073241455254f2222cc20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82eda7e2e63bccd2869efbb94f5c8743 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7db74de6c3e6d32c9d06466f84f36d52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_076b9db7ab109211ef48a8bbd4d35f7e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2536c71255768ee04ded99ce5d79033e |
| publicationDate | 2018-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109088002-A |
| titleOfInvention | A flash memory based on halogen perovskite material and its preparation method |
| abstract | The invention discloses a flash memory based on a halogen perovskite material and a preparation method thereof, wherein the flash memory comprises a rigid base electrode, a dielectric layer, a halogen perovskite layer, and a polymer layer arranged sequentially from bottom to top , a semiconductor layer and a metal film top electrode, the material of the halogen perovskite layer is one or more of methylamine lead iodide salt, methylamine lead bromide salt, formamidine lead iodide salt and formamidine lead bromide salt. The invention uses the halogen perovskite layer and the polymer layer as the floating gate layer of the flash memory, so that the flash memory based on the halogen perovskite material has excellent photoresponse and light regulation characteristics; at the same time, it is spin-coated on the halogen perovskite layer The polymer layer can protect the halogen perovskite material and improve the stability of the device. Therefore, the flash memory based on the halogen perovskite material of the present invention not only provides efficient accumulative optical recording programmable function and electrical erasing mode process, but also has precise and stable optical controllable performance. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109755388-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112820824-A |
| priorityDate | 2018-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 56.