| abstract |
This case provides a ferroelectric field effect transistor. In the ferroelectric field effect transistor, a semiconductor substrate, a dielectric layer, a polarity storage area and a conductor layer are arranged in sequence. The polarity preservation region includes a ferroelectric layer and an antiferroelectric layer. The operating speed of the memory can be accelerated by the coupling switching of the ferroelectric layer. This case also provides a ferroelectric memory, a data writing method, a data reading method and a manufacturing method of the ferroelectric memory. |