http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109087674-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8fbc9906e764b74305438320545c3c58 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-221 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-2259 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-2275 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-2273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G7-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-2257 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-22 |
| filingDate | 2017-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63d3a626aee8a63a3269c0ce89ee774f |
| publicationDate | 2018-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109087674-A |
| titleOfInvention | Ferroelectric memory and its data reading, writing and manufacturing method and capacitor structure |
| abstract | A selected ferroelectric memory cell of the ferroelectric memory provided by the present application is electrically coupled to the first and second bit lines, the first and second word lines and the plate line. The selected ferroelectric memory cell includes: a first field effect transistor, a second field effect transistor and a ferroelectric capacitor. Wherein, the control end of the first field effect transistor is electrically coupled to the first word line, the first access end of the first field effect transistor is electrically coupled to the first bit line, and the second access end of the first field effect transistor is electrically coupled to the first bit line. The first capacitance end of the ferroelectric capacitor and the second access end of the second field effect transistor; the second capacitance end of the ferroelectric capacitor is electrically coupled to the board line; the control end of the second field effect transistor is electrically coupled to the first There are two word lines, and the first access end is electrically coupled to the second bit line. |
| priorityDate | 2017-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 74.