http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109085486-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2601 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2018-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-109085486-B |
| titleOfInvention | Method for testing state density and capture cross section of semiconductor-insulator interface |
| abstract | The invention discloses a semiconductor-insulator interface state density and trappingThe cross section testing method comprises the following steps: (1) growing an insulator film on the surface of the semiconductor thin sheet, and then growing a metal film on the surface of the insulator film to further prepare the MIS device with a metal-insulator-semiconductor structure; (2) performing capacitance transient test on the MIS device at different test temperatures T to obtain the change of capacitance in the carrier emission process, and converting into charge N it The transient capacitance of (a); (3) for the above charge N it With respect to the time t derivative, the emission rates e of the charges at different test temperatures are determined p (ii) a (4) Under different charge densities, as ln (e) p /T 2 ) As for the function of 1/T, the interface state density and the distribution of the trap cross section with the energy level are obtained from the slope and the intercept, respectively. The invention can obtain the distribution of the capture cross section and the interface state density along with the energy level position, and has wide application. |
| priorityDate | 2018-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.