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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-495
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
filingDate 2017-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-109037046-B
titleOfInvention Metal gate, semiconductor device and manufacturing method thereof
abstract The invention provides a metal grid, a semiconductor device and a manufacturing method thereof.A oxygen-rich layer is arranged on the upper surface layer of at least one of a metal barrier layer and a work function setting metal layer, and oxygen in the oxygen-rich layer reacts with electrode metal in a metal electrode layer to form an oxide layer so as to prevent the electrode metal in the metal electrode layer from diffusing towards the direction of a semiconductor substrate, so that the reliability of the device is improved, the failure rate of the device is reduced, and the yield of integrated circuit products is improved; furthermore, a relatively thick covering barrier layer is deposited by using an Extensa deposition system, so that the good control of the deposition process of the covering barrier layer is realized, the subsequent metal electrode layer has good gap filling capacity, and the electrode metal in the metal electrode layer is further prevented from diffusing towards the direction of the semiconductor substrate.
priorityDate 2017-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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