http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108987568-A

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filingDate 2018-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_41060090a5998f814c35a17144bd6bf1
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publicationDate 2018-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-108987568-A
titleOfInvention Neurobionic device based on bismuth vanadate particle film, its preparation method and application
abstract The invention provides a neurobionic device based on bismuth vanadate particle film, its preparation method and application. The neural biomimetic device in the present invention comprises a bottom electrode, on which a functional layer made of BiVO 4 particle film is formed, and a top electrode is formed on the functional layer. The bottom electrode can be an FTO layer, and the top electrode can be a Ti electrode. The neurobionic device provided by the invention can simulate the learning and memory functions of biological synapses, and thus can be used to prepare neuromorphic computing chips. Most devices for simulating neurobiological synapse functions can only work in the RESET process, but the device in the present invention can realize bidirectional regulation in the SET and RESET processes. The as-fabricated devices can realize several basic functions of biological synapses simulated with a single device, including potentiation and inhibition, pulse time-dependent plasticity (STDP), double-pulse facilitation (PPF), and short-term plasticity to long-term plasticity transition.
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