http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108963754-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1231 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-125 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-125 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12 |
| filingDate | 2018-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108963754-B |
| titleOfInvention | Preparation method of DFB semiconductor laser with low divergence angle of optical communication waveband |
| abstract | The invention relates to a preparation method of a DFB semiconductor laser with a low divergence angle of an optical communication waveband, which comprises the steps of firstly, epitaxially growing a gain region on an N-InP substrate; depositing a SiO2 dielectric layer on the surface, photoetching to form a selective growth area of the optical field expansion structure, and wet etching the selective growth area to the substrate layer; preparing uniform Bragg grating in the growth gain region, corroding to form grating, and growing a grating covering layer; depositing a SiO2 dielectric layer on the waveguide substrate, photoetching to form a ridge structure, and corroding by adopting a bromine system corrosive liquid to form a ridge waveguide structure, wherein the ridge waveguide is a straight waveguide in a gain region and is a tapered waveguide in a light field expansion region; and (3) finishing epitaxial growth by adopting MOCVD, and performing a subsequent laser preparation process: regrowing the barrier layer and finally growing; manufacturing double grooves, opening a ridge shape, evaporating P-surface metal, thinning, evaporating N-surface metal, alloying in nitrogen atmosphere, dissociating, evaporating an end face optical film, and completing the preparation of the laser chip. The invention reduces the divergence angle of the laser chip and improves the coupling efficiency from the device to the single mode fiber. |
| priorityDate | 2018-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.