| abstract |
The invention provides a method for manufacturing a semiconductor device. After depositing a side wall material layer on the surface of the first patterned layer, firstly form a second patterned layer corresponding to the first grid on the side wall material layer, and then use The second patterned layer is a mask, and the side wall material layer is etched to form a third patterned layer with the first gate pattern and the second gate pattern, because the third patterned layer has no serious sparse/dense load effect, so using the third patterned layer as a mask to etch the gate layer to form the first gate and the second gate have no etching difference, avoiding the sparse/dense loading effect of the gate, and avoiding abnormalities The appearance of the edge second gate further ensures the performance of the manufactured semiconductor device. |