| abstract |
A method of forming a thin film and a method of manufacturing an integrated circuit device using the same, the method of forming a thin film comprising: forming by supplying a reaction inhibiting compound having a carbonyl group to an exposed surface of a lower film at a temperature of about 300°C to about 600°C a first reaction inhibiting layer chemisorbed on the first portion of the lower membrane; forming a first front of the first material chemisorbed on the second portion of the lower membrane at a temperature of about 300° C. to about 600° C. a bulk layer, the second portion is exposed through the first reaction inhibiting layer; and a reactive gas comprising A first monolayer of the first material is removed, and the first reaction inhibiting layer is removed from the surface of the lower film, thereby exposing the first portion. |