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Outgoing Links

Predicate Object
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-881
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00
filingDate 2018-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2020-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-108922962-B
titleOfInvention A kind of perovskite resistive memory based on Zr element doping and preparation method thereof
abstract The invention discloses a Zr element-doped perovskite resistive memory and a preparation method thereof, and relates to the technical field of semiconductor materials and functional devices. The resistive memory of the present invention includes a top electrode, a dielectric layer, a bottom electrode and a glass substrate in order from top to bottom, wherein: the dielectric layer is a halide perovskite material doped with Zr element. The resistive memory of the present invention has a simple structure, maintains the structure of the traditional resistive memory, does not need to add additional structural layers, and only by doping Zr element in the perovskite film, the resistive memory prepared by the present invention has a high performance. The switching ratio and stability are significantly improved, which greatly reduces the power consumption of the device, while also increasing the stability and uniformity of the device. In addition, the resistive memory of the present invention has the advantages of low preparation cost, simple process and easy operation, which is favorable for industrial application and has a good market application prospect.
priorityDate 2018-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 31.