| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2300-0439 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1229
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09F9-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B33-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78687 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2017-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2022-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-108886058-B |
| titleOfInvention |
Field effect transistor, display element, image display device and system |
| abstract |
A field effect transistor having: a gate electrode for applying a gate voltage; a source electrode and a drain electrode for transmitting electrical signals; an active layer formed between the source and drain electrodes; and a gate an insulating layer formed between the gate electrode and the active layer, the field effect transistor is characterized in that the active layer includes at least two oxide layers, layer A and layer B; and the active layer The layer satisfies the following condition (1) and/or condition (2). Condition (1): The active layer includes 3 or more oxide layers including 2 or more layers A. Condition (2): The band gap of the layer A is lower than the band gap of the layer B, and the oxygen affinity of the layer A is equal to or higher than the oxygen affinity of the layer B. |
| priorityDate |
2016-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |