| abstract |
The object of the present invention is to provide a resist for lithography that does not mix with the resist layer, has high dry etching resistance, has high heat resistance, has little mass loss at high temperature, and exhibits flat step substrate coverage. A resist underlayer film and a composition for forming a resist underlayer film for forming the resist underlayer film. The solution is a composition for forming a resist underlayer film comprising a polymer having a structural unit of the following formula (1). The structural unit of formula (1) is the structural unit of formula (2). The present invention provides a method for manufacturing a semiconductor device, comprising the steps of forming a resist underlayer film on a semiconductor substrate from a composition for forming a resist underlayer film, and forming a hard mask on the resist underlayer film The step of further forming a resist film on the hard mask, the step of forming a resist pattern by irradiating light or electron beams on the resist and developing it, and the hard mask through the resist pattern A step of etching and patterning the mask, a step of etching and patterning the underlayer film through the patterned hard mask, and processing the semiconductor substrate through the patterned resist underlayer film process. |