http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108878429-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_59b52689c733d07bfd3b76ac9701750c |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11507 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11502 |
| filingDate | 2018-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf2312837c103dd7a08f022757775c60 |
| publicationDate | 2018-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108878429-A |
| titleOfInvention | A two-dimensional material-organic ferroelectric material superlattice memory cell and its preparation |
| abstract | The present invention relates to a two-dimensional material-organic ferroelectric material superlattice memory unit and its preparation. The preparation method is as follows: a) taking a substrate (1), a dielectric layer (2) and a multi-layer two-dimensional material ( 31) The composite device structure is immersed in the electrolyte solution containing the organic ferroelectric material (32); b) A three-electrode system is fabricated on the multilayer two-dimensional material (31) and a negative voltage is applied, so that the positively charged organic The ions are embedded in the multi-layer two-dimensional material to form a superlattice (3); c) metal electrodes are set at both ends of the superlattice (3), and the process is completed. Compared with the prior art, the invention adopts an electrochemical organic molecular intercalation method to construct a stable superlattice material in which two-dimensional materials and organic ferroelectric molecular materials alternate. The capacitance formed by the ferroelectric material in the superlattice is in a parallel state, which improves the capacitance and integration density of the storage unit, and has the characteristics of good stability, low operating voltage, low power consumption and low cost. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111755447-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111755447-B |
| priorityDate | 2018-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.