http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108878363-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7624 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2017-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108878363-B |
| titleOfInvention | Semiconductor structure and method of forming the same |
| abstract | A semiconductor structure and a method for forming the same. The forming method includes: providing a substrate; forming a C-containing dielectric film on the substrate; performing a chemical mechanical polishing process on the C-containing dielectric film, wherein the chemical mechanical polishing process includes the following steps: The method includes performing multiple grinding operations on the C-containing media film through a grinding pad, and before and after each grinding operation, cleaning the grinding pad with a weak acid cleaning solution. In the present invention, when the C-containing dielectric film is subjected to multiple grinding operations with a grinding pad, before and after each grinding operation, a weak acid cleaning solution is used to clean the grinding pad, thereby removing the organic residues on the surface of the grinding pad. , to avoid the formation of organic residues and scratch defects on the surface of the formed semiconductor structure, thereby improving the electrical performance of the formed semiconductor structure. |
| priorityDate | 2017-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.