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filingDate 2018-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cfdc19bafd89e8fbe498e2b06be03133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f7e1bf8205dfb6b6a2163db436ed247
publicationDate 2018-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-108855246-A
titleOfInvention Preparation of a Chalcogenide Semiconductor CdX Composite H-TiO2 Based Nanotube Array
abstract The invention provides a preparation method of a chalcogenide semiconductor CdX composite H- TiO2 -based nanotube array, belonging to the technical field of nanocomposite materials. The steps of the specific preparation method are as follows: on the titanium-containing metal substrate, an ordered array of nanotubes is prepared by anodic oxidation; after crystallization treatment is performed on the prepared TiO2 ordered array of nanotubes, surface hydrogenation treatment is carried out to obtain H ‑TiO2-based nanotube array; the prepared H‑ TiO2 - based nanotube array is compounded with chalcogenide semiconductor CdX to prepare a chalcogenide semiconductor CdX-composite H‑ TiO2 -based nanotube array. The TiO 2 nanotube array composite material has cheap and easy-to-obtain raw materials, simple preparation method, highly ordered structure, high specific surface area, stable chemical properties, good photocatalytic performance, and high photoconversion rate. It can not only be used as a photogenerated cathodic protection It can also be used as a material for photocatalytic degradation of pollutants.
priorityDate 2018-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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