http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108847391-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 2018-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108847391-B |
| titleOfInvention | A kind of non-plasma dry etching method |
| abstract | The present disclosure provides a non-plasma dry etching method, wherein silicon dioxide and silicon nitride are etched by passing a gas mixture containing HF, and the gas mixture further includes a fluorine-containing gas and/or a hydroxyl compound, wherein each gas The flow ratio of the components is determined according to the required etching selection ratio of silicon dioxide/silicon nitride; it is judged whether the etching thickness of silicon dioxide and silicon nitride reaches a predetermined range, and if not, the etching is continued. The present disclosure can effectively avoid plasma damage and fine structure adhesion, and can effectively control the selection ratio of silicon dioxide and silicon nitride by adjusting the gas flow ratio and/or the introduction sequence, and has simple process and low equipment cost. |
| priorityDate | 2018-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.