http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108807587-B

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01Q1-2283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01Q1-36
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01Q1-36
filingDate 2018-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2020-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-108807587-B
titleOfInvention Silicon-based chip with function of enhancing mid-infrared spectrum signal and preparation method thereof
abstract The invention discloses a silicon-based chip with a function of enhancing mid-infrared spectrum signals, which comprises a silicon substrate, wherein a Ge buffer layer and a heavily doped Ge layer are sequentially arranged on the silicon substrate, and a sub-wavelength microstructure array is etched on the heavily doped Ge layer. The invention also discloses a preparation method of the silicon-based chip with the function of enhancing the mid-infrared spectrum signal. Compared with a III-V group semiconductor, the silicon-based chip with the function of enhancing the mid-infrared spectrum signal has the characteristic of weak lattice absorption and is more suitable for serving as a molecular sensor chip material; silicon is used as a substrate, so that monolithic integration with an electronic device is facilitated, and the stability and the mass production of the device are greatly improved.
priorityDate 2018-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 27.