| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66575 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823493
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2652
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2018-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce8d4a7a90d083938929827b1d7f1a01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_175b13e5d6771f779aad6375a79a2c5e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ebf84e65c15368589e965ec37eba3e0 |
| publicationDate |
2018-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-108807272-A |
| titleOfInvention |
High Dose Antimony Implantation Through Shield for N-Type Buried Layer Integration |
| abstract |
The present application discloses high dose antimony implantation through shielding layer for N-type buried layer integration. A microelectronic device (100) having an n-type buried layer (NBL) is formed by forming a thin masking layer (108) on a top surface (106) of a substrate (104). Antimony (114) is implanted into the substrate (104) through the shielding layer (108) exposed by the implant mask (110); the implant mask (110) blocks the antimony (114) to the liner outside the NBL region (112) Bottom (104). The implant mask (110) is removed, leaving a masking layer (108) on the surface (106), the masking layer having the same thickness over the NBL region (112) and over regions outside the NBL. During the anneal/drive process, silicon dioxide is formed both in the NBL region (112) and outside the NBL region. Slightly more silicon dioxide is formed in the NBL region (112), where more silicon is consumed and thus shallow silicon recesses are formed. An epitaxial layer is grown on the top surface (106) of the substrate (104). The structure of the microelectronic device (100) is also disclosed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112382606-A |
| priorityDate |
2017-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |