http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108780829-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-133603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 |
| filingDate | 2016-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108780829-B |
| titleOfInvention | Semiconductor device with a plurality of transistors |
| abstract | One embodiment includes: a substrate; a first conductive semiconductor layer disposed on the substrate; a second conductive semiconductor layer disposed on the first conductive semiconductor layer; and an active layer disposed between the first and second conductive semiconductor layers, wherein the first conductive semiconductor layer includes a first region in which a portion of the first conductive semiconductor layer is exposed, and includes an inclined portion disposed between an upper surface of the first region and an upper surface of the second conductive semiconductor layer, wherein the inclined portion includes a first edge contacting the upper surface of the second conductive semiconductor layer and a second edge contacting the upper surface of the first region of the first conductive semiconductor layer, wherein a ratio of the first and second lengths is 1: 0.87 to 1: 4.26, wherein the first length is a length between the first and second edges in a first direction and the second length is a length between the first and second edges in a second direction, wherein the first and second directions are directions perpendicular to each other. |
| priorityDate | 2016-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.