| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2201-123 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-134309
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8236 |
| filingDate |
2016-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca75fec6888bc05fcfc5ca2e92ef9191
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c27b7c9c91b4ede594a58012348e7b0 |
| publicationDate |
2018-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-108780755-A |
| titleOfInvention |
Thin film transistor, thin film transistor substrate, liquid crystal display device, and manufacturing method of thin film transistor |
| abstract |
In a TFT whose channel region is made of an oxide semiconductor, threshold voltage shift due to photo-excited holes in the vicinity of the source electrode and the drain electrode is suppressed, and reliability is improved. Between the oxide semiconductor layer (130) and the gate insulating film (120), a lower semiconductor layer (140) is partially provided. The lower semiconductor layer (140) is present in the source overlapping region (171) where the oxide semiconductor layer (130) overlaps the source electrode (151), and the drain overlap region (152) where the oxide semiconductor layer (130) overlaps the drain electrode (152). At least one of the regions (172). On the other hand, between the source overlapping region (171) and the drain overlapping region (172), there is provided a region where the underlying semiconductor layer (140) does not exist. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110073486-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110073486-B |
| priorityDate |
2016-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |