| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_810c64d3e0d8477e7d4d19957985f273 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K2217-0018
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823493 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K17-6871
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02 |
| filingDate |
2017-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5f09a3f6da311e5be2c8788a9a49aed |
| publicationDate |
2018-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-108735730-A |
| titleOfInvention |
Power switch and its semiconductor device |
| abstract |
The invention discloses a power switch and a semiconductor device thereof. The power switch includes a first transistor unit cell, a second transistor unit cell, a base region and a conductive layer. The first transistor cell includes a first electrode. The second transistor cell includes a second electrode. The base region is located between the first transistor unit cell and the second transistor unit cell. The conductive layer is electrically connected to the base region, the first electrode and the second electrode respectively. The invention can reduce the area of the chip and avoid the burning of the high impedance area. |
| priorityDate |
2017-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |