http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108735671-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate | 2017-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108735671-B |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | The invention provides a method for manufacturing a semiconductor device, which is characterized in that after a gate oxide layer of a core area is removed, the gate oxide layer of an input-output area is subjected to secondary nitridation treatment and secondary nitridation post-annealing treatment, so that the nitrogen loss in the gate oxide layer of the input-output area can be compensated, the surface defects of the gate oxide layer of the input-output area can be repaired, the reliability of a finally formed input-output element is improved, and the reliability of the whole semiconductor device is further improved. |
| priorityDate | 2017-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 59.