| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_543f81076a0539dda3718ef97249ec66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate |
2017-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ba581a25af015b128d7d253cfd65049
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbb1d55c02022357206c7b9b95f75904
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_118801b668b3439a6ba71b70ab04187f |
| publicationDate |
2018-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-108695235-A |
| titleOfInvention |
Method for Improving Etched Microloading of Tungsten Metal Layer |
| abstract |
The invention discloses a method for improving the etching microload of a tungsten metal layer. First, a semiconductor substrate is provided with a main surface, wherein the semiconductor substrate has a plurality of grooves. A tungsten metal layer is deposited all over the semiconductor substrate, and the tungsten metal layer fills up the plurality of trenches. A planarization process is performed on the tungsten metal to form a planarization layer on the tungsten metal layer. A first etching step is performed to completely etch the planarization layer and part of the tungsten metal layer, wherein the etching selectivity ratio of the planarization layer and the tungsten metal layer in the first etching step is 1:1. A second etching step is performed to continue etching the tungsten metal layer until the upper surface of the tungsten metal layer is lower than the main surface of the semiconductor substrate. |
| priorityDate |
2017-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |