http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108695062-B

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filingDate 2018-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2020-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-108695062-B
titleOfInvention Polycrystalline dielectric thin film and capacitor element
abstract The present invention provides a polycrystalline dielectric film in which the main component is represented by the general formula (M (1)) 1‑x M(2) x )(M(3) 1‑y M(4) y )(O 1‑ z N z ) 3 The oxynitride composition shown. X < 0 > x < 1, y < 1, 0 < z < 1/3. The sum of the formal valences of M (1), M (2), M (3) and M (4) is 14. The crystal structure of oxynitride includes an octahedral structure composed of a central atom, 2 atoms at 4a positions, and 4 atoms at 8h positions. The central atom is M (3) or M (4). The atom at the 4a position is an O atom or an N atom. The 8 h-position atom is an O atom or an N atom. In the octahedral structure, when an angle formed by a straight line connecting 2 atoms at 4a positions and a c-axis direction of the crystal structure is represented by θ, 0.5 ° ≦ θ ≦ 12 °.
priorityDate 2017-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 40.