http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108682723-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20 |
| filingDate | 2018-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108682723-B |
| titleOfInvention | The method for preparing gallium nitride base nanometer ring structure |
| abstract | A method of preparing gallium nitride base nanometer ring structure, comprising: in GaN epitaxy on piece spin coating one layer of polymeric, carry out first time nano impression；First piece of nano-imprint stamp is removed after coining, makes polymer that the figure complementary with first piece of nano-imprint stamp be presented；Remove the polymer of figure bottom portion of groove；Polymer graphic is transferred to GaN epitaxy on piece, and GaN epitaxy piece is cleaned, removes polymer；In GaN epitaxy on piece spin on polymers again, second piece of nano-imprint stamp is pressed in above the polymer of second of spin coating, carries out second of nano impression, forms figure；Carry out demoulding and plasma bombardment；One layer of ITO or metal is deposited as exposure mask on the surface of GaN epitaxy on piece figure, removes the polymer on GaN epitaxy piece surface using the method for removing；Etching, obtains a nanometer ring structure；Wet etching removes ITO or metal and polymer, completes the preparation of nanometer ring structure. |
| priorityDate | 2018-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.