http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108680609-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-127 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-12 |
| filingDate | 2018-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108680609-B |
| titleOfInvention | Room-temperature ammonia gas sensor taking p-type delafossite structure oxide as sensitive material and preparation method thereof |
| abstract | The invention discloses a room-temperature ammonia gas sensor taking p-type delafossite structure oxide as a sensitive material and a preparation method thereof. Firstly processing p-type delafossite structure AgAlO 2 As a sensitive material of the ammonia sensor, a resistance type room temperature ammonia sensor with excellent performance is constructed. The sensor fully utilizes the advantages of high sensitivity, low cost, simple device, easy integration and easy realization of on-site continuous detection of semiconductor resistance type sensing materials and AgAlO 2 The method has the characteristics of high selectivity to ammonia gas at room temperature, constructs a resistance-type sensor which can work at room temperature, is sensitive to ammonia gas (the lower detection limit can reach the million level), has good selectivity and good stability, is economic and environment-friendly, finds a good sensitive material for the ammonia gas sensor, and opens up a new application field for p-type wide band gap delafossite structure oxides. |
| priorityDate | 2018-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.