http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108666380-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02363 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 2018-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108666380-B |
| titleOfInvention | A kind of Buddha's warrior attendant wire cutting polysilicon chip and its etching method with class chamfered edge platform suede structure |
| abstract | The present invention relates to a kind of Buddha's warrior attendant wire cutting polysilicon chips and its etching method with class chamfered edge platform suede structure, such chamfered edge platform suede structure rib number is between 3 to 10 ribs；Two bottom surface of chamfered edge platform is in approximate circle or oval, or square side circular arc combines；The angular range of hole bottom terrace with edge face and silicon chip surface is between 0 ° -90 °；This structure size is uniform, aperture is 400nm ~ 1.5mm, 200 ~ 500nm of hole depth；Preparation method is: (1) polysilicon damaged layer on surface of silicon slice removes；(2) black silicon production；(3) polysilicon silicon chip surface is corrected: after black silicon face amendment, washing, immersing in the mixed solution of 10%-45% hydrogen peroxide and 1%-10% additive, ' class chamfered edge platform ' structure is made in polysilicon silicon chip surface；The structure is easier to be passivated, and silicon chip surface more evenly, can further decrease reflectivity, greatly improves the efficiency of solar battery. |
| priorityDate | 2018-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.