http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108660458-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13439 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-30 |
| filingDate | 2018-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108660458-B |
| titleOfInvention | Metal film etching liquid composition and conductive pattern forming method using the same |
| abstract | The present invention relates to a metal film etchant composition and a method for forming a conductive pattern using the same, and more particularly, to a metal film etchant composition including, based on the total weight of the composition: 40-60 wt% of phosphoric acid; 3-8 wt% of nitric acid; 5-20 wt% of acetic acid; 0.1 to 3 wt% of a phosphate; 0.1 to 6 wt% of an anti-adsorption agent containing at least one of a diol compound and a compound containing a plurality of phosphoric acid groups; and the residual water, thereby effectively preventing the etched metal from being re-adsorbed on the substrate, not damaging the lower film, and showing excellent etching characteristics for the film to be etched. |
| priorityDate | 2017-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 87.