http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108660438-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45502 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45578 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45574 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45563 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45546 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52 |
| filingDate | 2018-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108660438-B |
| titleOfInvention | Substrate processing apparatus, manufacturing method of semiconductor device, and recording medium |
| abstract | The present invention relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a recording medium. The problem to be solved is to control the film thickness distribution in the substrate plane of the film formed on the substrate. The substrate processing apparatus includes: a processing chamber for forming a film containing a main element on a substrate; a first nozzle for supplying a raw material containing the main element to the substrate in the processing chamber; and a second nozzle provided separately from the first nozzle At the position of , supplying raw materials to the substrate in the processing chamber; a third nozzle, supplying reactants to the substrate in the processing chamber; and a plurality of exhaust ports for exhausting the atmosphere in the processing chamber, wherein, in a plan view, a plurality of exhaust ports The gas ports are respectively arranged at positions not opposite to the first gas ejection holes of the first nozzle and the second gas ejection holes of the second nozzle. |
| priorityDate | 2017-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.