http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108640117-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-85 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-984 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B32-984 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 |
| filingDate | 2018-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108640117-B |
| titleOfInvention | Two-dimensional SiC ultrathin nanostructure synthesized by molten salt method with graphene as template and preparation method thereof |
| abstract | The invention relates to a two-dimensional SiC ultrathin nanostructure synthesized by using graphene as a template through a low-temperature molten salt method and a preparation method thereof. According to the method, Si powder is used as a raw material, graphene is used as a template, a mixture of NaCl and NaF is used as a molten salt medium, synthesis is carried out by a molten salt method under the conditions of a certain atmosphere and a low temperature of 1050-1200 ℃, then products containing molten salt are respectively subjected to repeated operations of dissolving, centrifuging, filtering and the like for 3-6 times by water, residual molten salt is removed, and the two-dimensional SiC ultrathin nanostructured semiconductor material can be obtained after drying. When preparing the N-type SiC two-dimensional ultrathin nano-structure material, N is selected 2 Controlling the process to dope the synthetic SiC with N under the atmosphere; when the p-type SiC two-dimensional ultrathin nanostructure material is prepared, B, Al, Ga or Be is added into raw materials under Ar atmosphere to Be used as a doping agent. The two-dimensional SiC nanostructure prepared by the invention can be used for high-frequency and high-power microelectronic devices and lithium ion battery cathode materials in severe environments such as high temperature, high radiation, strong corrosivity and the like. |
| priorityDate | 2018-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.